Fabrication of Abrupt AlN/GaN Multi Quantum Wells by Low Temperature Metal Organic Vapor Phase Epitaxy

被引：9
|
作者：
Yang, Jung-Seung [1 ]
Sodabanlu, Hassanet [2 ]
Sugiyama, Masakazu [2 ,3 ]
Nakano, Yoshiaki [2 ,4 ]
Shimogaki, Yukihiro [1 ]
机构：
[1] Univ Tokyo, Sch Engn, Dept Mat Engn, Bunkyo Ku, Tokyo 1138656, Japan
[2] Univ Tokyo, Sch Engn, Dept Elect Engn & Informat Syst, Bunkyo Ku, Tokyo 1138656, Japan
[3] Univ Tokyo, Sch Engn, Inst Engn Innovat, Bunkyo Ku, Tokyo 1138656, Japan
[4] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538904, Japan
来源：
APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 05期
关键词：
ULTRAFAST INTERSUBBAND RELAXATION; MU-M; OPTICAL-PROPERTIES; TRANSITION; GAN; GROWTH; DEPOSITION; ABSORPTION; CARBON; ALN;
D O I：
10.1143/APEX.2.051004
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
AlN/GaN multi quantum wells (MQWs) with abrupt interface were grown by metal organic vapor phase epitaxy (MOVPE). It was revealed that the interface abruptness and coherency of AlN/GaN MQWs to AlN buffer layer were improved at lower temperature of 930 degrees C. We suggest that the inter-diffusion between wells and barriers was suppressed by lowering growth temperature. The surface of MQWs became smooth at lower temperature of 930 degrees C showing 0.86 nm of root mean square (RMS) value. Therefore, it is strongly suggested that the low temperature growth at 930 degrees C is essential for the fabrication of abrupt and smooth AlN/GaN MQWs by MOVPE. (c) 2009 The Japan Society of Applied Physics
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页数：3
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