Near infrared absorption and room temperature photovoltaic response in AlN/GaN superlattices grown by metal-organic vapor-phase epitaxy

被引：38

作者：

Baumann, E.

Giorgetta, F. R.

Hofstetter, D.

Golka, S.

Schrenk, W.

Strasser, G.

Kirste, L.

Nicolay, S.

Feltin, E.

Carlin, J. F.

Grandjean, N.

机构：

[1] Univ Neuchatel, CH-2000 Neuchatel, Switzerland

[2] Vienna Univ Technol, Inst Festkorperphys, A-1040 Vienna, Austria

[3] Vienna Univ Technol, Zentrum Mikro & Nanostrukturen, A-1040 Vienna, Austria

[4] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

[5] Ecole Polytech Fed Lausanne, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 04期

关键词：

D O I：

10.1063/1.2234847

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on intersubband absorption of near infrared radiation in AlN/GaN superlattice structures grown by metal-organic vapor-phase epitaxy. A good correlation between well thickness and absorption peak energy was obtained. One sample shows a photovoltaic signal which overlaps well with the corresponding absorption curve at around 1.5 mu m (830 meV), a common wavelength in optical fiber telecommunication systems. This photovoltaic signal is strongest at temperatures around 75 K and persists up to room temperature. The frequency response of this sample was measured with a modulated 1.5 mu m laser diode. The amplitude of the response was highest for a frequency of 36 kHz.

引用

页数：3

共 50 条

[1] Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions
Nicolay, S
Feltin, E
Carlin, JF
Mosca, M
Nevou, L
Tchernycheva, M
Julien, FH
Ilegems, M
Grandjean, N
[J]. APPLIED PHYSICS LETTERS, 2006, 88 (15)
[2] PHOTOLUMINESCENCE OF GASB GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY
CHIDLEY, ETR
HAYWOOD, SK
HENRIQUES, AB
MASON, NJ
NICHOLAS, RJ
WALKER, PJ
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (01) : 45 - 53
[3] Dislocation reduction in GaN grown on porous TiN networks by metal-organic vapor-phase epitaxy
Fu, Y
Yun, F
Moon, YT
Özgür, Ü
Xie, JQ
Ni, XF
Biyikli, N
Morkoç, H
Zhou, L
Smith, DJ
Inoki, CK
Kuan, TS
[J]. JOURNAL OF APPLIED PHYSICS, 2006, 99 (03)
[4] Bandgap behavior of InGaN/GaN short period superlattices grown by metal-organic vapor phase epitaxy
Staszczak, G.
Gorczyca, I.
Grzanka, E.
Smalc-Koziorowska, J.
Targowski, G.
Czernecki, R.
Siekacz, M.
Grzanka, S.
Skierbiszewski, C.
Schulz, T.
Christensen, N. E.
Suski, T.
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2017, 254 (08):
[5] Tensile strain introduced in AlN layer grown by metal-organic vapor-phase epitaxy on (0001) 6H-SiC with (GaN/AlN) buffer
Kurimoto, M
Nakada, T
Ishihara, Y
Shibata, M
Honda, T
Kawanishi, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (5B): : L551 - L553
[6] Metal-organic vapor phase epitaxy growth and characterization of AlN/GaN heterostructures
S. M. Hubbard
D. Pavlidis
V. Valiaev
A. Eisenbach
[J]. Journal of Electronic Materials, 2002, 31 : 395 - 401
[7] Metal-organic vapor phase epitaxy growth and characterization of AlN/GaN heterostructures
Hubbard, SM
Pavlidis, D
Valiaev, V
Eisenbach, A
[J]. JOURNAL OF ELECTRONIC MATERIALS, 2002, 31 (05) : 395 - 401
[8] GaN-based tunnel junctions and optoelectronic devices grown by metal-organic vapor-phase epitaxy
Takeuchi, Tetsuya
Kamiyama, Satoshi
Iwaya, Motoaki
Akasaki, Isamu
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, 36 (06)
[9] SUBSTRATE-POLARITY DEPENDENCE OF METAL-ORGANIC VAPOR-PHASE EPITAXY-GROWN GAN ON SIC
SASAKI, T
MATSUOKA, T
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (09) : 4531 - 4535
[10] CHARACTERIZATION OF THE SHALLOW AND DEEP LEVELS IN SI DOPED GAN GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY
HACKE, P
MAEKAWA, A
KOIDE, N
HIRAMATSU, K
SAWAKI, N
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (12A): : 6443 - 6447

← 1 2 3 4 5 →