Stuck-at Fault Resilience using Redundant Transistor Logic Gates

被引:0
|
作者
McWilliam, Richard [1 ]
Schiefer, Philipp [1 ]
Purvis, Alan [1 ]
Khan, Samir [2 ]
机构
[1] Univ Durham, Dept Engn, Durham, England
[2] Univ Tokyo, Dept Aeronaut & Astronaut, Tokyo, Japan
来源
IEEE 17TH INT CONF ON DEPENDABLE, AUTONOM AND SECURE COMP / IEEE 17TH INT CONF ON PERVAS INTELLIGENCE AND COMP / IEEE 5TH INT CONF ON CLOUD AND BIG DATA COMP / IEEE 4TH CYBER SCIENCE AND TECHNOLOGY CONGRESS (DASC/PICOM/CBDCOM/CYBERSCITECH) | 2019年
关键词
D O I
10.1109/DASC/PiCom/CBDCom/CyberSciTech.2019.00115
中图分类号
TP18 [人工智能理论];
学科分类号
081104 ; 0812 ; 0835 ; 1405 ;
摘要
The paper demonstrates a novel design for a stuck-at CMOS gate based on dual-purpose redundancy. It combines detection and mitigation against common stuck-at fault conditions to improve fault tolerance without the need to replicate the entire circuit. Using fault rate analysis, the principle is outlined and showed for NAND gate designs. For single fault events, the relationship between fault rate and the number of redundant elements is evaluated in order to identify designs that achieve full fault masking and fault detection coverage with minimum redundancy overhead. The combination of fault masking and detection could be useful for future work on self-reconfiguring platforms.
引用
收藏
页码:595 / 601
页数:7
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