Low resistance, unannealed, Ohmic contacts to p-type In0.27Ga0.73Sb

被引：7
|
作者：
Champlain, James G. [1 ]
Magno, Richard [1 ]
Boos, J. Brad [1 ]
机构：
[1] USN, Res Lab, Washington, DC 20375 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2006年 / 24卷 / 05期
关键词：
D O I：
10.1116/1.2353838
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Unannealed Pd/Pt/Au contacts to p-type In0.27Ga0.73Sb were fabricated and measured. Relatively high hole mobilities, with respect to similarly doped InP-lattice-matched materials, and associated low sheet resistances were measured for the p-type In0.27Ga0.73Sb material. The unannealed Pd/Pt/Au contacts were found to be Ohmic in nature; and for a hole density of 2.9 x 10(19) cm(-3) and a mobility of 160 cm(2)/V s, a specific contact, resistance of 7.6 x 10(-8) ohm cm(2) was measured.
引用
收藏
页码：2388 / 2390
页数：3
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