Triple transistor based triple modular redundancy with embedded voter circuit

被引:6
|
作者
Mukherjee, Atin [1 ]
Dhar, Anindya Sundar [2 ]
机构
[1] Natl Inst Technol Rourkela, Dept Elect & Commun Engn, Rourkela, India
[2] Indian Inst Technol Kharagpur, Dept Elect & Elect Commun Engn, Kharagpur, W Bengal, India
来源
MICROELECTRONICS JOURNAL | 2019年 / 87卷
关键词
Reliability; Fault tolerant voter; Triple modular redundancy; Triple transistor logic; Static redundancy; FAULT-TOLERANCE TECHNIQUE; LOGIC; RELIABILITY; DESIGN;
D O I
10.1016/j.mejo.2019.03.014
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a new static redundancy technique that combines the redundancy at transistor level with redundancy at functional level and offers a very good reliability at minimal increase in the hardware, delay and power overheads. The proposed method does not require any external voter hardware as in triple modular redundancy (TMR) method; instead the last level gates of the triplicated modules of the circuit are combined and designed using fault tolerant triple transistor logic which act as an embedded voter circuit. This method offers higher reliability at lesser area and shorter critical path compared to the most popular TMR method as well as other recently proposed static fault tolerant methods. This makes our design suitable for designing fault tolerant systems for real-time resource constrained applications. We have provided theoretical analysis as well as simulation results proving the superiority of our method.
引用
收藏
页码:101 / 109
页数:9
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