Analytical analysis of short-channel effects in MOSFETs for sub-100 nm technology

被引：0

作者：

Park, JS

Lee, SY

Shin, HS

Dutton, RW

机构：

[1] Ewha W Univ, Dept Informat Elect Engn, Seodaemoon Gu, Seoul, South Korea

[2] Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA

来源：

ELECTRONICS LETTERS | 2002年 / 38卷 / 20期

关键词：

D O I：

10.1049/el:20020797

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using a scaling length (lambda) analysis, the short-channel effects of bulk MOSFETs with super-steep retrograded channels (SSR), fully-depleted SOI, and double-gate structures are investigated. It is found that the minimum channel length should be greater than 5lambda and the depletion thickness of the SSR should be less than 30 nm in order to be applicable to 70 nm CMOS technology.

引用

页码：1222 / 1223

页数：2

共 50 条

[21] Piezoresistive characteristics of short-channel MOSFETs on (100) silicon
Bradley, AT
Jaeger, RC
Suhling, JC
O'Connor, KJ
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (09) : 2009 - 2015
[22] Evanescent-mode analysis of short-channel effects in MOSFETs
Lee, J
Shin, H
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 44 (01) : 50 - 55
[23] Comprehensive Analysis of Short-Channel Effects in Ultrathin SOI MOSFETs
Xie, Qian
Lee, Chia-Jung
Xu, Jun
Wann, Clement
Sun, Jack Y. -C.
Taur, Yuan
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (06) : 1814 - 1819
[24] Frequency characteristics of sub-100 nm double-gate MOSFET for suppressing short channel effects
Ko, SW
Kim, YD
Jung, HK
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (04) : S134 - S136
[25] A Two-Dimensional Analytical Solution for Short-Channel Effects in Nanowire MOSFETs
Yu, Bo
Yuan, Yu
Song, Jooyoung
Taur, Yuan
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (10) : 2357 - 2362
[26] Analog and Short Channel Effects Performance of Sub-100 nm Graded Channel Fully Depleted Silicon On Insulator (SOI)
Jafar, Norsyahida
Soin, Norhayati
MINO'09: PROCEEDINGS OF THE 8TH WSEAS INTERNATIONAL CONFERENCE ON MICROELECTRONICS, NANOELECTRONICS, OPTOELECTRONICS: ADVANCES IN MICROELECTRONICS, NANOELECTRONICS AND OPTOELECTRONICS, 2009, : 63 - 67
[27] Unusual Short-Channel Effects in SOI MOSFETs
Navarro, C.
Bawedin, M.
Andrieu, F.
Sagnes, B.
Cristoloveanu, S.
2013 INTERNATIONAL CONFERENCE ON SEMICONDUCTOR TECHNOLOGY FOR ULTRA LARGE SCALE INTEGRATED CIRCUITS AND THIN FILM TRANSISTORS (ULSIC VS. TFT 4), 2013, 54 (01): : 197 - 202
[28] On the reverse short-channel effects of submicron MOSFETs
Narayanan, R
Latif, Z
OrtizConde, A
Liou, JJ
Golovanova, L
Wong, W
Sanchez, FJG
SOUTHCON/96 - CONFERENCE RECORD, 1996, : 345 - 349
[29] Importance of ballistic carriers for the dynamic response in sub-100 nm MOSFETs
Okagaki, T
Tanaka, M
Ueno, H
Miura-Mattausch, M
IEEE ELECTRON DEVICE LETTERS, 2002, 23 (03) : 154 - 156
[30] Characterization of sub-100 nm MOSFETs with high K gate dielectric
Zhu, Hui-Wen
Liu, Xiao-Yan
Shen, Chao
Kang, Jin-Feng
Han, Ru-Qi
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2001, 22 (09): : 1107 - 1111

← 1 2 3 4 5 →