Organic thin film transistors with HfO2 high-k gate dielectric grown by anodic oxidation or deposited by sol-gel

被引：1

作者：

Tardy, J. ^{[1
]}

Erouel, M. ^{[1
]}

Deman, A. L. ^{[1
]}

Gagnairel, A. ^{[1
]}

JaffreZiC, N. ^{[1
]}

Teodorescu, V. ^{[1
]}

Blanchin, G. ^{[1
]}

Canut, B. ^{[1
]}

Barau, A. ^{[1
]}

Zaharescu, M. ^{[1
]}

机构：

[1] Ecole Cent Lyon, LEOM, F-69134 Ecully, France

来源：

Polytronic 2005, Proceedings | 2005年

关键词：

organic transistors; high-k oxides; HfO2; pentacene;

D O I：

10.1109/POLYTR.2005.1596498

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report here on pentacene based organic field effect transistors (OFETs) with a high-k HfO2 gate oxide. HfO2 layers were prepared by two different methods: anodic oxidation and sol-gel. A comparison of the two processes on the electrical properties of OFETs is given. Ultra thin nanoporous (20 nm) sol-gel deposited oxide films were obtained following an annealing at 450 degrees C. They lead to high mobility and stable devices (mu=0.12 cm(2)/V.s). On the other hand, devices with anodic HfO2 revealed a little bit more leaky and show some hysteresis. Anodization, however, presents the advantage of being a fully room temperature process, compatible with plastic substrates.

引用

页码：113 / 116

页数：4

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