A novel compact ECD tool for ULSI Cu metallization

被引：2

作者：

Tsujimura, M ^{[1
]}

Mishima, K ^{[1
]}

Kunisawa, J ^{[1
]}

Makino, N ^{[1
]}

机构：

[1] Ebara Corp, Ohta Ku, Tokyo 1448721, Japan

来源：

ISSM 2000: NINTH INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR MANUFACTURING, PROCEEDINGS | 2000年

关键词：

ECD; Cu metallization; porous ceramic;

D O I：

10.1109/ISSM.2000.993627

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A novel compact ECD (Electro chemical Deposition) tool was designed and developed for Cu multi-level interconnection. The design enables the entire plating process (i.e., pre-processing, electro-chemical deposition, cleaning, and drying processed wafers) to be performed using a single module, by which means optimum Raw Process Time, good uptime and low COO can be achieved. The merit of the unique design using a porous ceramic presented here are non-uniformity improvement, edge profile control, and black-film protection.

引用

页码：106 / 109

页数：4

共 50 条

[21] Advanced silver metallization for ULSI applications
Alford, TL
1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, 1998, : 202 - 205
[22] Advanced Metallization for ULSI Applications FOREWORD
Machida, Hideaki
JAPANESE JOURNAL OF APPLIED PHYSICS, 2023, 62 (SH)
[23] Advanced Metallization for ULSI Applications FOREWORD
Nakatsuka, Osamu
Maekawa, Kazuyoshi
Saitoh, Takeyasu
Suzuki, Keisuke
Takeyama, Mayumi B.
Yokogawa, Shinji
JAPANESE JOURNAL OF APPLIED PHYSICS, 2020, 59
[24] Temperature estimation of ULSI metallization systems
Xiao, X
Ruan, G
Zhu, ZM
Gessner, T
SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS, 2001, : 375 - 378
[25] Advanced Metallization for ULSI Applications FOREWORD
Joo, Young-Chang
JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (06)
[26] Advanced Metallization for ULSI Applications FOREWORD
Nakatsuka, Osamu
JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (07)
[27] Oxidation resistance of Cu electroless Co(W,B) capping layer for ULSI metallization
Einati, H
Bogush, V
Sverdlov, Y
Shanmugasundram, A
Weidman, T
Shacham-Diamand, Y
ADVANCED METALLIZATION CONFERENCE 2004 (AMC 2004), 2004, : 831 - 836
[28] Electroless deposition of NiCrB diffusion barrier layer film for ULSI-Cu metallization
Wang, Yuechun
Chen, Xiuhua
Ma, Wenhui
Shang, Yudong
Lei, Zhengtao
Xiang, Fuwei
APPLIED SURFACE SCIENCE, 2017, 396 : 333 - 338
[29] COPPER-BASED METALLIZATION FOR ULSI APPLICATIONS
LI, J
BLEWER, R
MAYER, JW
MRS BULLETIN, 1993, 18 (06) : 18 - 21
[30] ADVANCED COPPER METALLIZATION TECHNOLOGY FOR ULSI INTERCONNECTS
OHMI, T
TSUBOUCHI, K
SOLID STATE TECHNOLOGY, 1992, 35 (04) : 47 - 52

← 1 2 3 4 5 →