Single-Photon Avalanche Diode CMOS Sensor for Time-Resolved Fluorescence Measurements

被引：95

作者：

Stoppa, David ^{[1
]}

Mosconi, Daniel ^{[1
]}

Pancheri, Lucio ^{[1
]}

Gonzo, Lorenzo ^{[1
]}

机构：

[1] Fdn Bruno Kessler, Ctr Ric Sci & Tecnol FBK irst, I-38100 Povo, TN, Italy

来源：

IEEE SENSORS JOURNAL | 2009年 / 9卷 / 09期

关键词：

CMOS; fluorescence lifetime; single-photon avalanche diode (SPAD); time-gating; ARRAY;

D O I：

10.1109/JSEN.2009.2025581

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A single-photon avalanche diode-based pixel array for the analysis of fluorescence phenomena is presented. Each 180 x 150 mu m(2) pixel integrates a single photon detector combined with an active quenching circuit and a 17-bit digital events counter. On-chip master logic provides the digital control phases required by the pixel array with a full programmability of the main timing synchronisms. The pixel exhibits an average dark count rate of 3 kcps and a dynamic range of over 120-dB in time uncorrelated operation. A complete characterization of the single photon avalanche diode characteristics is reported. Time-resolved fluorescence measurements have been demonstrated by detecting the fluorescence decay of quantum-dot samples without the aid of any optical filters for excitation laser light cutoff.

引用

页码：1084 / 1090

页数：7

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