High SNR CMOS S/H IC for Multi-Carrier Direct RF Under Sampling Receiver

被引：0

作者：

Motoyoshi, Mizuki ^{[1
]}

Koizumi, Tomokazu ^{[1
]}

Maehata, Takashi ^{[2
]}

Kameda, Suguru ^{[1
]}

Suematsu, Noriharu ^{[1
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Sendai, Miyagi, Japan

[2] Sumitomo Elect Ind, Inforcommun & Social Infrastruct Syst R&D Ctr, Osaka, Japan

来源：

2016 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT) | 2016年

关键词：

Digital RF; RFIC; CMOS; Sampling; LOW-POWER;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Direct RF under sampling reception has been developed to reduce the size and the power consumption of the terrestrial wireless terminals. The system is suitable for multi-carrier operation. Some sample and hold (S/H) IC was reported to operate in high frequency or wideband operation. However the signal-noise ratio (SNR) has limitation caused by output buffer. We proposed high SNR S/H circuit with small gain ripple at the MHz to GHz frequency band for multi-carrier reception. The proposed S/H IC is designed and fabricated in 90 nm CMOS process. The fabricated IC performs improving of the output power and SNR about 23Bm and 10dB, respectively. Moreover, the maximum frequency with |S11| of less than -10dB is 11.5GHz.

引用

页数：3

共 48 条

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