Low-Power High-Linearity Area-Efficient Multi-Mode GNSS RF Receiver in 40nm CMOS

被引:0
|
作者
Li, Jinbo [1 ]
Chen, Dongpo [1 ]
Guan, Rui [1 ]
Qin, Peng [1 ]
Lu, Zhijian [1 ]
Zhou, Jianjun [1 ]
机构
[1] Shanghai Jiao Tong Univ, Sch Microelect, Ctr Analog RF IC CARFIC, Shanghai 200240, Peoples R China
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
the integration of Global Navigation Satellite Systems (GNSS) receiver with other wireless functionalities, e. g., GSM, WCDMA, LTE, Bluetooth, and WiFi, brings up new design challenges due to constrained silicon area and power consumption, and especially the interferences from other wireless functionalities. A dual-channel multi-mode GNSS RF receiver, for reception of GPS-L1, GLONASS-B1, Compass-B1, and Galileo-E1, is proposed to address these challenges. A novel frequency plan and a reconfigurable complex band-pass filter enable the two multi-mode reception channels to share most circuit blocks and thus reduce the power consumption and silicon area. An N-path filter and adaptive gain control is implemented in the RF front-end to reject the out-of-band interferences for high linearity. Designed in a 40nm CMOS, the proposed multi-mode GNSS RF receiver, including the RF front-end, baseband filter and ADC, PLL, and VCO, achieves a total noise figure of 1.7dB, out-of-band (1710MHz) input 1dB compression point of -16.5dBm, while consuming a total power of 13.2mW.
引用
收藏
页码:1291 / 1294
页数:4
相关论文
共 50 条
  • [1] An inductorless multi-mode RF front end for GNSS receiver in 55 nm CMOS
    罗彦彬
    马成炎
    甘业兵
    钱敏
    叶甜春
    Journal of Semiconductors, 2015, (10) : 144 - 150
  • [2] An inductorless multi-mode RF front end for GNSS receiver in 55 nm CMOS
    Luo, Yanbin
    Ma, Chengyan
    Gan, Yebing
    Qian, Min
    Ye, Tianchun
    JOURNAL OF SEMICONDUCTORS, 2015, 36 (10)
  • [3] An inductorless multi-mode RF front end for GNSS receiver in 55 nm CMOS
    罗彦彬
    马成炎
    甘业兵
    钱敏
    叶甜春
    Journal of Semiconductors, 2015, 36 (10) : 144 - 150
  • [4] A novel low-power high-linearity CMOS filter
    Shi, CL
    Wu, Y
    Ismail, M
    PROCEEDINGS OF THE 43RD IEEE MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS I-III, 2000, : 204 - 207
  • [5] Low-Power RF Modeling of a 40nm CMOS Technology Using BSIM6
    Chalkiadaki, Maria-Anna
    Enz, Christian C.
    MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, MIXDES 2013, 2013, : 57 - 62
  • [6] Low Power High Data Rate GHz Range Receiver in 40nm CMOS Technology
    Yu, XiaoPeng
    Lu, ZhengHao
    Lim, Wei Meng
    Yeo, Kiat Seng
    Liu, Yang
    Yan, X. L.
    Hu, Changhui
    2011 INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2011,
  • [7] A low-power, area-efficient multichannel receiver for micro MRI
    Dehkhoda, Fahimeh
    Frounchi, Javad
    Al-Sarawi, Said
    INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS, 2014, 42 (08) : 858 - 869
  • [8] A Fully Integrated Multi-Mode High-Efficiency Transmitter for IoT Applications in 40nm CMOS
    Sharifzadeh, Mojtaba
    Masnadi-Shirazi, Amir Hossein
    Rajavi, Yashar
    Lavasani, Hossein Miri
    Taghivand, Mazhareddin
    2018 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC), 2018,
  • [9] An Area-Efficient, Low-Power CMOS Fractional Bandgap Reference
    Appuhamylage, Indika U. K. Bogoda
    Okura, Shunsuke
    Ido, Toru
    Taniguchi, Kenji
    IEICE TRANSACTIONS ON ELECTRONICS, 2011, E94C (06) : 960 - 967
  • [10] A high-speed low-power SAR ADC in 40nm CMOS with combined energy-efficient techniques
    Huang, Yujia
    Meng, Qiao
    Li, Fei
    Wu, Jie
    IEICE ELECTRONICS EXPRESS, 2021, 18 (11):