The AFM LAO lithography on GaMnAs layers

被引：5

作者：

Voves, Jan ^{[1
]}

Cukr, M. ^{[2
]}

Novak, V. ^{[2
]}

机构：

[1] Czech Tech Univ, Dept Microelect, CZ-16627 Prague 6, Czech Republic

[2] ASCR, Inst Phys, Dept Surfaces & Interfaces, CZ-16253 Prague, Czech Republic

来源：

MICROELECTRONIC ENGINEERING | 2009年 / 86卷 / 4-6期

关键词：

Local anodic oxidation; Atomic force microscopy; Ferromagnetic semiconductor; Magnetoresistance; LOCAL OXIDATION;

D O I：

10.1016/j.mee.2008.11.035

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We prepared constrictions on ferromagnetic GaMnAs layer by the local anodic oxidation (LAO) using the atomic force microscope (AFM). These oxide lines, produced by the negatively biased AFM tip, formed the electrical barrier to the conducting holes in the layer. The constricted samples were characterized at low temperature (12 K). They showed magnetoresistance effect specific for nanoconstrictions during in-plane magnetic field sweep in both polarities for the different mutual orientation of magnetic held and current. The LAO appears to become a useful patterning technique for research of ferromagnetic semiconductor nanostructures. Further optimization of LAO parameters for reaching better homogeneity of the oxide lines is needed. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：561 / 564

页数：4

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