Spin-based quantum computing in silicon CMOS-compatible platforms

被引：0
|
作者：
Dzurak, A. S. [1 ]
机构：
[1] UNSW, Sch Elect Engn, Sydney, NSW, Australia
来源：
2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2016年
基金：
澳大利亚研究理事会;
关键词：
ELECTRON-SPIN; QUBIT; DOT; READOUT; GATE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reviews the current state of development of spin-based quantum bits (qubits) based on silicon metal-oxide-semiconductor (SiMOS) devices, including both single phosphorus donor qubits in silicon and gate-defined quantum dot qubits that are compatible with CMOS manufacturing.
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页数：2
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