Nanostructures on epitaxial SiGe films on silicon

被引：0
|
作者：
Chen, LJ [1 ]
Wu, WW [1 ]
Lee, SW [1 ]
Chen, HC [1 ]
Yang, TH [1 ]
机构：
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
来源：
STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS XL (SOTAPOCS XL) AND NARROW BANDGAP OPTOELECTRONIC MATERIALS AND DEVICES II | 2004年 / 2004卷 / 02期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Nanodots and nano-rings are basic building blocks of nanostructures. Si1-xGex heterostructures are attractive for electronic and optoelectronic devices. In this paper, we review the recent progresses in the growth of metal silicide quantum dot arrays and Si-Ge quantum rings on epitaxial SiGe thin films on silicon.
引用
收藏
页码：241 / 252
页数：12
相关论文
共 50 条
  • [31] Critical thickness enhancement of epitaxial SiGe films grown on small structures
    Liang, Y
    Nix, WD
    Griffin, PB
    Plummer, JD
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (04)
  • [32] Epitaxial growth of SiGe thin films by ion-beam sputtering
    Sasaki, K
    Nakata, K
    Hata, T
    APPLIED SURFACE SCIENCE, 1997, 113 : 43 - 47
  • [33] Strain relaxation through islands formation in epitaxial SiGe thin films
    Barucca, G.
    Lucchetti, L.
    Majni, G.
    Mengucci, P.
    Murri, R.
    Pinto, N.
    Applied Surface Science, 1996, 102 : 73 - 77
  • [34] Oxidation rate enhancement of SiGe epitaxial films oxidized in dry ambient
    Spadafora, M
    Privitera, G
    Terrasi, A
    Scalese, S
    Bongiorno, C
    Carnera, A
    Di Marino, M
    Napolitani, E
    APPLIED PHYSICS LETTERS, 2003, 83 (18) : 3713 - 3715
  • [35] Kinetics of epitaxial growth of Si and SiGe films on (110)Si substrates
    Sugiyama, N
    Moriyama, Y
    Nakaharai, S
    Tezuka, T
    Mizuno, T
    Takagi, S
    APPLIED SURFACE SCIENCE, 2004, 224 (1-4) : 188 - 192
  • [36] Strain relaxation through islands formation in epitaxial SiGe thin films
    Barucca, G
    Lucchetti, L
    Majni, G
    Mengucci, P
    Murri, R
    Pinto, N
    APPLIED SURFACE SCIENCE, 1996, 102 : 73 - 77
  • [37] CHARACTERIZATION OF EPITAXIAL SIGE THIN-FILMS ON SI - ANALYTICAL CONSIDERATIONS
    EVANS, KL
    ANDERSON, TA
    LIAW, M
    GREGORY, R
    MUNUKUTLA, LV
    GRAHAM, RJ
    MCCARTNEY, MR
    SURFACE AND INTERFACE ANALYSIS, 1992, 18 (02) : 129 - 136
  • [38] GROWTH OF EPITAXIAL GAAS FILMS ON SILICON SUBSTRATES
    VERNON, S
    SHANFIELD, S
    WOLFSON, R
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (06) : C240 - C240
  • [39] EPITAXIAL GROWTH OF CUBIC SILICON CARBIDE FILMS
    KHAN, IH
    SUMMERGR.RN
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1967, 4 (05): : 327 - &
  • [40] TETRAHEDRAL GROWTH IN PYROLYTIC SILICON EPITAXIAL FILMS
    CHU, TL
    GAVALER, JR
    JOURNAL OF APPLIED PHYSICS, 1964, 35 (12) : 3619 - &
12345