Nanostructures on epitaxial SiGe films on silicon

被引：0

作者：

Chen, LJ ^{[1
]}

Wu, WW ^{[1
]}

Lee, SW ^{[1
]}

Chen, HC ^{[1
]}

Yang, TH ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

来源：

STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS XL (SOTAPOCS XL) AND NARROW BANDGAP OPTOELECTRONIC MATERIALS AND DEVICES II | 2004年 / 2004卷 / 02期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nanodots and nano-rings are basic building blocks of nanostructures. Si1-xGex heterostructures are attractive for electronic and optoelectronic devices. In this paper, we review the recent progresses in the growth of metal silicide quantum dot arrays and Si-Ge quantum rings on epitaxial SiGe thin films on silicon.

引用

页码：241 / 252

页数：12

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