Nanostructures on epitaxial SiGe films on silicon

被引：0
|
作者：
Chen, LJ [1 ]
Wu, WW [1 ]
Lee, SW [1 ]
Chen, HC [1 ]
Yang, TH [1 ]
机构：
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
来源：
STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS XL (SOTAPOCS XL) AND NARROW BANDGAP OPTOELECTRONIC MATERIALS AND DEVICES II | 2004年 / 2004卷 / 02期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Nanodots and nano-rings are basic building blocks of nanostructures. Si1-xGex heterostructures are attractive for electronic and optoelectronic devices. In this paper, we review the recent progresses in the growth of metal silicide quantum dot arrays and Si-Ge quantum rings on epitaxial SiGe thin films on silicon.
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收藏
页码：241 / 252
页数：12
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