Evaluation of pinhole defect in DLC film prepared by hybrid process of plasma-based ion implantation and deposition

被引:19
|
作者
Yatsuzuka, Mitsuyasu [1 ]
Tateiwa, Junichi [1 ]
Uchida, Hitoshi [1 ]
机构
[1] Univ Hyogo, Grad Sch Engn, Himeji, Hyogo 6712201, Japan
关键词
corrosion resistance; diamond-like carbon (DLC); pinhole defect; pinhole area ratio; anodic polarization; plasma-based ion implantation and deposition (PBIID);
D O I
10.1016/j.vacuum.2006.01.069
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Pinhole defect in diamond-like carbon (DLC) film prepared by a hybrid process of plasma-based ion implantation and deposition using toluene plasma was evaluated by the critical passivation current density in the anodic polarization method. The area ratio of pinhole defects to the SUS304 bare substrate was decreased exponentially with increasing DLC film thickness and reached about 3 x 10(-6)% at 11 mu m film thickness. As a result, it is found that the corrosion resistance of DLC-coated specimens was improved with increasing film thickness. The production of an interfacial mixing layer by ion implantation from methane and acetylene plasmas between the DLC film and the substrate material reduced pinhole defects in the film. (c) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1351 / 1355
页数:5
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