Effects of target voltage on the structure of the film prepared by plasma-based ion implantation and deposition method

被引:1
|
作者
Yukimura, K
Kuze, E
Kumagai, M
Maruyama, T
Kohata, M
Numata, K
Saito, H
Ma, XX
机构
[1] Doshisha Univ, Fac Engn, Dept Elect Engn, Kyoto 6100321, Japan
[2] Kanagawa Ind Technol Res Inst, Mat Engn Div, Kanagawa 2430435, Japan
[3] Kyoto Univ, Grad Sch Engn, Dept Chem Engn, Kyoto 6068501, Japan
[4] Toshiba Tungaloy Co Ltd, Mat Component Dev Dept, Tsurumi Ku, Yokohama, Kanagawa 2300027, Japan
[5] Kanagawa High Technol Fdn, Mat Characterizat Lab, Takatsu Ku, Kawasaki, Kanagawa 2130012, Japan
[6] Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China
来源
关键词
titanium nitride; plasma-based ion implantation; deposition; preferred orientation; droplet;
D O I
10.1016/S0257-8972(03)00098-7
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
This article describes the characteristics of titanium nitride film prepared by the plasma-based ion implantation and deposition method using a titanium cathodic arc of d.c. 80 A. The surface morphology and structure of the film were affected by the voltage applied to the target. With increasing the negative voltage, the surface became smoother with a lesser number of particles. The grain structure varied from the stratified one at 0 kV to the columnar one at -5 to -20 kV, and further to the densely packed columnar one at -40 kV. These facts strongly suggested that the ions in the sheath played an important role in the deposition of the film. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:472 / 474
页数:3
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