Enhanced hole injections in organic light-emitting devices by depositing nickel oxide on indium tin oxide anode

被引：218
|
作者：
Chan, IM [1 ]
Hsu, TY [1 ]
Hong, FC [1 ]
机构：
[1] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 701, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 10期
关键词：
D O I：
10.1063/1.1505112
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An ultrathin layer of nickel oxide (NiO) was deposited on the indium tin oxide (ITO) anode to enhance the hole injections in organic light-emitting diode (OLED) devices. A very low turn-on voltage (3 V) was actually observed for the device with NiO on ITO. The enhancement of hole injections by depositing NiO on the ITO anode was further verified by the hole-only devices. The excellent hole-injection ability of NiO was also demonstrated by devising a device with patterned NiO on the ITO anode. Our results suggest that the NiO/ITO anode is an excellent choice to enhance hole injections of OLED devices. (C) 2002 American Institute of Physics.
引用
收藏
页码：1899 / 1901
页数：3
相关论文
共 50 条
  • [41] Influence of indium tin oxide electrodes deposited at room temperature on the properties of organic light-emitting devices
    Satoh, T
    Fujikawa, H
    Taga, Y
    APPLIED PHYSICS LETTERS, 2005, 87 (14) : 1 - 3
  • [42] Enhancement of hole injection using iridium-oxide-coated indium tin oxide anodes in organic light-emitting diodes
    Kim, SY
    Lee, JL
    Kim, KB
    Tak, YH
    APPLIED PHYSICS LETTERS, 2005, 86 (13) : 1 - 3
  • [43] Flexible organic light-emitting diodes with a co-sputtered platinum-indium tin oxide anode
    Hsu, C. M.
    Wu, W. T.
    Huang, J. Y.
    IDW '07: PROCEEDINGS OF THE 14TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3, 2007, : 1019 - 1022
  • [44] Performance enhancement of single layer organic light-emitting diodes using chlorinated indium tin oxide as the anode
    Wu, Zhenxuan
    Yang, Zhenlin
    Xue, Kai
    Fei, Chunchun
    Wang, Fei
    Yan, MinNan
    Zhang, Hongmei
    Ma, Dongge
    Huang, Wei
    RSC ADVANCES, 2018, 8 (20): : 11255 - 11261
  • [45] Platinum doped indium tin oxide as en anode contact layer for flexible organic light-emitting diodes
    Hsu, Ching-Ming
    Huang, Jai-Yang
    Li, Hsin-Hui
    Wu, Wen-Tuan
    IDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007, 2007, : 794 - 796
  • [46] Influence of nickel oxide nanolayer and doping in organic light-emitting devices
    Woo, Sungho
    Kim, Jaehyun
    Cho, Gwijeong
    Kim, Kangpil
    Lyu, Hongkeun
    Kim, Youngkyoo
    JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY, 2009, 15 (05) : 716 - 718
  • [47] Modification of indium tin oxide for improved hole injection in organic light emitting diodes
    Shen, YL
    Jacobs, DB
    Malliaras, GG
    Koley, G
    Spencer, MG
    Ioannidis, A
    ADVANCED MATERIALS, 2001, 13 (16) : 1234 - 1238
  • [48] Effects of metal-doped indium-tin-oxide buffer layers in organic light-emitting devices
    Chen, T.-H.
    Wu, T.J.
    Chen, J.Y.
    Liou, Y.
    Journal of Applied Physics, 2006, 99 (11):
  • [49] Electrical, optical, and structural properties of indium-tin-oxide thin films for organic light-emitting devices
    Kim, H
    Gilmore, CM
    Piqué, A
    Horwitz, JS
    Mattoussi, H
    Murata, H
    Kafafi, ZH
    Chrisey, DB
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (11) : 6451 - 6461
  • [50] Effects of metal-doped indium-tin-oxide buffer layers in organic light-emitting devices
    Chen, T. -H.
    Wu, T. J.
    Chen, J. Y.
    Liou, Y.
    JOURNAL OF APPLIED PHYSICS, 2006, 99 (11)
12345