Investigation of on-current degradation behavior induced by surface hydrolysis effect under negative gate bias stress in amorphous InGaZnO thin-film transistors

被引：37

作者：

Liu, Kuan-Hsien ^{[1
]}

Chang, Ting-Chang ^{[2
,3
]}

Chang, Kuan-Chang ^{[4
]}

Tsai, Tsung-Ming ^{[4
]}

Hsieh, Tien-Yu ^{[2
]}

Chen, Min-Chen ^{[2
]}

Yeh, Bo-Liang ^{[5
]}

Chou, Wu-Ching ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan

[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[3] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan

[4] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 804, Taiwan

[5] AU Optron, Adv Display Technol Res Ctr, Hsinchu 30078, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 10期

关键词：

NONVOLATILE MEMORY; OXIDE; LAYER;

D O I：

10.1063/1.4863682

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This study investigates the electrical instability under negative gate bias stress (NGBS) induced by surface hydrolysis effect. Electrical characteristics exhibit instability for amorphous InGaZnO (a-IGZO) Thin Film Transistors (TFTs) under NGBS, in which on-current degradation and current crowding phenomenon can be observed. When the negative gate bias is applied on the TFT, hydrogen ions will dissociate from ZnO-H bonds and the dissociated hydrogen ions will cause electrical instability under NGBS. The ISE-Technology Computer Aided Design simulation tool and moisture partial pressure modulation measurement are utilized to clarify the anomalous degradation behavior. (C) 2014 AIP Publishing LLC.

引用

页数：4

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