Improved Stability of Pr-Doped Amorphous InGaZnO4 Thin-Film Transistors Under Negative Bias Illumination Stress

被引：0

作者：

Hao, Shujiong ^{[1
]}

Zhang, Dongli ^{[1
]}

Lv, Nannan ^{[1
]}

Wang, Huaisheng ^{[1
]}

Wang, Mingxiang ^{[1
]}

机构：

[1] Soochow Univ, Sch Elect & Informat Engn, Suzhou 215006, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2025年 / 46卷 / 03期

基金：

中国国家自然科学基金;

关键词：

a-IGZO; TFT; NBIS; praseodymium; oxygen vacancy; OFFSET;

D O I：

10.1109/LED.2025.3528063

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Negative bias illumination stress (NBIS) instability is an important issue to overcome for the application of amorphous InGaZnO4 (a-IGZO) thin-film transistors (TFTs) in flat-panel displays. In this work, TFTs based on praseodymium (Pr)-doped a-IGZO were fabricated, and their NBIS stability at different temperatures was characterized. The transfer curve shifts in the negative gate bias direction under NBIS, and the magnitude of the shift increases significantly at elevated temperatures even with a weak illumination intensity. Benefiting from Pr doping, the oxygen vacancies in the channel a-IGZO can be reduced for TFTs with a metal cover layer after annealing in an oxygen atmosphere. Thus, significantly improved NBIS stability of a-IGZO TFTs at both room temperature and elevated temperatures is demonstrated.

引用

页码：420 / 423

页数：4

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