The effect of exposure to arsenic flow on the optical properties of quantum dot arrays in the InAs/GaAs(100) system

被引：1
|
作者：
Dubrovskii, VG [1 ]
Kryzhanovskaya, NV
Ustinov, VM
Tonkikh, AA
Egorov, VA
Polyakov, NK
Samsonenko, YB
Cirlin, GE
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] Russian Acad Sci, Inst Analyt Instrument Bldg, St Petersburg 194021, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2004年 / 30卷 / 04期
基金：
俄罗斯基础研究基金会;
关键词：
Arsenic; Optical Property; Layer Thickness; Exposure Time; Kinetic Model;
D O I：
10.1134/1.1748597
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The optical properties of quantum dot arrays in the MBE-grown InAs/GaAs(100) epitaxial system with an effective InAs layer thickness of 1.9 monolayers were studied in samples exposed to the beam of As-4 for various times after switching off the In beam. The results of photoluminescence measurements showed that the emission wavelength increased with the exposure time within certain limits. This behavior agrees with predictions of the kinetic model of the initial stage of quantum dot formation. (C) 2004 MAIK "Nauka / Interperiodica".
引用
收藏
页码：272 / 274
页数：3
相关论文
共 50 条
  • [41] Evolution of wetting layer in InAs/GaAs quantum dot system
    Y.H. Chen
    X.L. Ye
    Z.G. Wang
    Nanoscale Research Letters, 1
  • [42] Evolution of wetting layer in InAs/GaAs quantum dot system
    Chen, Y. H.
    Ye, X. L.
    Wang, Z. G.
    NANOSCALE RESEARCH LETTERS, 2006, 1 (01): : 79 - 83
  • [43] Effect of rapid thermal annealing on the noise properties of InAs/GaAs quantum dot structures
    Arpatzanis, N.
    Tsormpatzoglou, A.
    Dimitriadis, C. A.
    Song, J. D.
    Choi, W. J.
    Lee, J. I.
    Charitidis, C.
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (05)
  • [44] Optical properties and optimization of electromagnetically induced transparency in strained InAs/GaAs quantum dot structures
    Barettin, D.
    Houmark, J.
    Lassen, B.
    Willatzen, M.
    Nielsen, T. R.
    Mork, J.
    Jauho, A. -P.
    PHYSICAL REVIEW B, 2009, 80 (23)
  • [45] Structural and optical properties of self-assembled InAs quantum dot molecules on GaAs substrates
    Tian, Peng
    Huang, Lirong
    Yu, Yi
    Huang, Dexiu
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 28 (06): : 1271 - 1273
  • [46] InAs Quantum Dot Clusters Grown on GaAs Droplet Templates: Surface Morphologies and Optical Properties
    Liang, B. L.
    Dorogan, V. G.
    Mazur, Yu. I.
    Strom, N. W.
    Lee, J. H.
    Sablon, K. A.
    Wang, Zh. M.
    Salamo, G. J.
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2009, 9 (05) : 3320 - 3324
  • [47] Optical properties of bilayer InAs/GaAs quantum dot structures: Influence of strain and surface morphology
    Joyce, PB
    Le Ru, EC
    Krzyzewski, TJ
    Bell, GR
    Murray, R
    Jones, TS
    PHYSICAL REVIEW B, 2002, 66 (07):
  • [48] Persistent template effect in InAs/GaAs quantum dot bilayers
    Clarke, E.
    Howe, P.
    Taylor, M.
    Spencer, P.
    Harbord, E.
    Murray, R.
    Kadkhodazadeh, S.
    McComb, D. W.
    Stevens, B. J.
    Hogg, R. A.
    JOURNAL OF APPLIED PHYSICS, 2010, 107 (11)
  • [49] Effect of substrate misorientation on quantum-dot size distribution in the InAs/GaAs system
    D. G. Vasil’ev
    V. P. Evtikhiev
    V. E. Tokranov
    I. V. Kudryashov
    V. P. Kochereshko
    Physics of the Solid State, 1998, 40 : 787 - 789
  • [50] Effect of GaAS(100) 2° surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots
    Liang, S.
    Zhu, H. L.
    Ye, X. L.
    Wang, W.
    APPLIED SURFACE SCIENCE, 2006, 252 (23) : 8126 - 8130
12345