The effect of exposure to arsenic flow on the optical properties of quantum dot arrays in the InAs/GaAs(100) system

被引：1

作者：

Dubrovskii, VG ^{[1
]}

Kryzhanovskaya, NV

Ustinov, VM

Tonkikh, AA

Egorov, VA

Polyakov, NK

Samsonenko, YB

Cirlin, GE

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Russian Acad Sci, Inst Analyt Instrument Bldg, St Petersburg 194021, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2004年 / 30卷 / 04期

基金：

俄罗斯基础研究基金会;

关键词：

Arsenic; Optical Property; Layer Thickness; Exposure Time; Kinetic Model;

D O I：

10.1134/1.1748597

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical properties of quantum dot arrays in the MBE-grown InAs/GaAs(100) epitaxial system with an effective InAs layer thickness of 1.9 monolayers were studied in samples exposed to the beam of As-4 for various times after switching off the In beam. The results of photoluminescence measurements showed that the emission wavelength increased with the exposure time within certain limits. This behavior agrees with predictions of the kinetic model of the initial stage of quantum dot formation. (C) 2004 MAIK "Nauka / Interperiodica".

引用

页码：272 / 274

页数：3

共 50 条

[21] Effect of growth kinetics on the InAs/GaAs quantum dot arrays formation on vicinal surfaces
Cirlin, G.E.
Petrov, V.N.
Golubok, A.O.
Tipissev, S.Ya.
Dubrovskii, V.G.
Guryanov, G.M.
Ledentsov, N.N.
Bimberg, D.
Surface Science, 1997, 377-379 (1-3): : 895 - 898
[22] Optical and structural properties of InAs quantum dot arrays grown in an InxGa1−xAs matrix on a GaAs substrate
N. V. Kryzhanovskaya
A. G. Gladyschev
S. A. Blokhin
Yu. G. Musikhin
A. E. Zhukov
M. V. Maksimov
N. D. Zakharov
A. F. Tsatsul’nikov
N. N. Ledentsov
P. Werner
F. Guffart
D. Bimberg
Semiconductors, 2004, 38 : 833 - 836
[23] Optical and structural properties of InAs quantum dot arrays grown in an InxGa1-xAs matrix on a GaAs substrate
Kryzhanovskaya, NV
Gladyschev, AG
Blokhin, SA
Musikhin, YG
Zhukov, AE
Maksimov, MV
Zakharov, ND
Tsatsul'nikov, AF
Ledentsov, NN
Werner, P
Guffart, F
Bimberg, D
SEMICONDUCTORS, 2004, 38 (07) : 833 - 836
[24] Investigation of the effect of varying growth pauses on the structural and optical properties of InAs/GaAs quantum dot heterostructures
Sengupta, S.
Halder, N.
Chakrabarti, S.
Herrera, Miriam
Bonds, Marta
Browning, Nigel D.
SUPERLATTICES AND MICROSTRUCTURES, 2009, 46 (04) : 611 - 617
[25] Shaping InAs quantum dot photoluminescence using GaAs nanoresonator arrays
Vaskin, Aleksandr
Liu, Sheng
Zilk, Matthias
Fasold, Stefan
Leung, Benjamin
Tsai, Miao-Chan
Yang, Yuanmu
Vabishchevich, Polina P.
He, Xiaowei
Kim, Younghee
Hartmann, Nicolai F.
Addamane, Sadhvikas
Keeler, Gordon A.
Wang, George
Htoon, Han
Doorn, Stephen K.
Balakrishnan, Ganesh
Pertsch, Thomas
Sinclair, Michael B.
Brener, Igal
Staude, Isabelle
2018 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2018,
[26] Effect of nitrogen on the InAs/GaAs quantum dot formation
Ivanova, L.
Eisele, H.
Lenz, A.
Timm, R.
Schumann, O.
Geelhaar, L.
Riechert, H.
Daehne, M.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 2, 2010, 7 (02): : 355 - 358
[27] In islands and their conversion to InAs quantum dots on GaAs (100): Structural and optical properties
Urbanczyk, A.
Hamhuis, G. J.
Notzel, R.
JOURNAL OF APPLIED PHYSICS, 2010, 107 (01)
[28] Optical properties of InAs/AlyGa1-yAs/GaAs quantum dot structures
Altieri, P
Sanguinetti, S
Gurioli, M
Grilli, E
Guzzi, M
Frigeri, P
Franchi, S
Trevisi, G
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 88 (2-3): : 234 - 237
[29] Effect of annealing on optical properties of InAs quantum dots grown by MOCVD on GaAs (100) vicinal substrates
Liang, S
Zhu, HL
Pan, JQ
Zhao, LJ
Wang, W
CHINESE PHYSICS LETTERS, 2005, 22 (10) : 2692 - 2695
[30] Effect of different cap layers on the structure and optical properties of InAs/GaAs self-assembled quantum dot
Tian Peng
Huang Li-Rong
Fei Shu-Ping
Yu Yi
Pan Bin
Xu Wei
Huang De-Xiu
ACTA PHYSICA SINICA, 2010, 59 (08) : 5738 - 5742

← 1 2 3 4 5 →