The effect of exposure to arsenic flow on the optical properties of quantum dot arrays in the InAs/GaAs(100) system

被引：1
|
作者：
Dubrovskii, VG [1 ]
Kryzhanovskaya, NV
Ustinov, VM
Tonkikh, AA
Egorov, VA
Polyakov, NK
Samsonenko, YB
Cirlin, GE
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] Russian Acad Sci, Inst Analyt Instrument Bldg, St Petersburg 194021, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2004年 / 30卷 / 04期
基金：
俄罗斯基础研究基金会;
关键词：
Arsenic; Optical Property; Layer Thickness; Exposure Time; Kinetic Model;
D O I：
10.1134/1.1748597
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The optical properties of quantum dot arrays in the MBE-grown InAs/GaAs(100) epitaxial system with an effective InAs layer thickness of 1.9 monolayers were studied in samples exposed to the beam of As-4 for various times after switching off the In beam. The results of photoluminescence measurements showed that the emission wavelength increased with the exposure time within certain limits. This behavior agrees with predictions of the kinetic model of the initial stage of quantum dot formation. (C) 2004 MAIK "Nauka / Interperiodica".
引用
收藏
页码：272 / 274
页数：3
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