A Low Dark Count p-i-n Diode Based SPAD in CMOS Technology

被引：59
|
作者：
Veerappan, Chockalingam [1 ]
Charbon, Edoardo [1 ]
机构：
[1] Delft Univ Technol, NL-2628 CD Delft, Netherlands
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2016年 / 63卷 / 01期
关键词：
CMOS; p-i-n; single-photon avalanche diode (SPAD); substrate isolation; wide depletion; PHOTON AVALANCHE-DIODE; TIME-OF-FLIGHT; 130NM CMOS; ARRAY; IMAGER;
D O I：
10.1109/TED.2015.2475355
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a novel CMOS single-photon avalanche diode (SPAD) is presented, and the device is designed using a vertical p-i-n diode construction. The p-i-n diode with a wide depletion region enables a low-noise operation. The proposed design achieves dark count rates of 1.5 cps/mu m(2) at 11 V excess bias, while the photon detection probability (PDP) is greater than 40% from 460 to 600 nm. Through the operation at very high excess bias voltages, it is possible to reach the PDP compression point where sensitivity to the breakdown voltage is low, thus ensuring high PDP uniformity; this feature makes it, especially, suitable for multimegapixel SPAD arrays.
引用
收藏
页码：65 / 71
页数：7
相关论文
共 50 条
  • [1] A P-I-N Structure Single-Photon Avalanche Diode Detector with Low Dark Count Rate
    Li Zheng
    Liu Danlu
    Dong Jie
    Bian Dajing
    Xu Yue
    [J]. ACTA OPTICA SINICA, 2024, 44 (09)
  • [2] Lowering the Dark Count Rate of SPAD Implemented in CMOS FDSOI Technology
    de Albuquerque, T. Chaves
    Issartel, D.
    Clerc, R.
    Pittet, P.
    Cellier, R.
    Calmon, F.
    [J]. 2019 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS), 2019,
  • [3] Design and Characterization of n/p-well CMOS SPAD With Low Dark Count Rate and High Photon Detection Efficiency
    Wu, Jau Yang
    Liu, Chun-Hsien
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (02) : 582 - 587
  • [4] P-I-N DIODE DRIVERS
    不详
    [J]. ELECTRONIC ENGINEERING, 1972, 44 (536): : 18 - &
  • [5] Low dark current InGaAs(P)/InP p-i-n photodiodes
    Chen, YW
    Hsu, WC
    Hsu, RT
    Wu, YH
    Chen, YJ
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (7A): : 4249 - 4252
  • [6] Low dark current InGaAs(P)/InP p-i-n photodiodes
    Chen, Yen-Wei
    Hsu, Wei-Chou
    Hsu, Rong-Tay
    Wu, Yue-Huei
    Chen, Yeong-Jia
    [J]. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2003, 42 (7 A): : 4249 - 4252
  • [7] Low dark current InGaAs(P)/InP p-i-n photodiodes
    Chen, YW
    Hsu, WC
    Chen, YJ
    [J]. PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM, 2003, : 95 - 98
  • [8] Silicon p-i-n photodiode with low values of dark current
    Ashcheulov, AA
    Godovanyuk, VM
    Dobrovolsky, YG
    Rarenko, IM
    Ryukhtyn, VV
    Ostapov, SE
    [J]. FOURTH INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE AND MATERIAL PROPERTIES FOR INFRARED OPTOELECTRONICS, 1999, 3890 : 117 - 120
  • [9] A low dark count rate single photon avalanche diode with standard 180 nm CMOS technology
    Wang, Wei
    Wang, Guang
    Zeng, Hongan
    Zhao, Yuanyao
    Chio, U-Fat
    Yuan, Jun
    [J]. MODERN PHYSICS LETTERS B, 2019, 33 (09):
  • [10] Low-noise GaAs quantum dots in a p-i-n diode
    Zhai, Liang
    Nguyen, Giang N.
    Loebl, Matthias C.
    Spinnler, Clemens
    Javadi, Alisa
    Ritzmann, Julian
    Wieck, Andreas D.
    Ludwig, Arne
    Warburton, Richard J.
    [J]. 2021 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2021,
12345