Silicon p-i-n photodiode with low values of dark current

被引：0
|
作者：
Ashcheulov, AA [1 ]
Godovanyuk, VM [1 ]
Dobrovolsky, YG [1 ]
Rarenko, IM [1 ]
Ryukhtyn, VV [1 ]
Ostapov, SE [1 ]
机构：
[1] Chernovtsy State Univ, Chernovtsy, Ukraine
来源：
FOURTH INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE AND MATERIAL PROPERTIES FOR INFRARED OPTOELECTRONICS | 1999年 / 3890卷
关键词：
p-i-n photodiode; dark current;
D O I：
10.1117/12.368340
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Dark current dependence of silicon p-i-n photodiode on the p(+)-type layer location depth at the photodiode crystal back, it was revealed that the smallest specific values of dark current is obtained at 6 - 9 mu m p(+)-type layer depth. Three mechanisms that explain the obtained results were considered: dislocational, metal impurities and strain influence on the metal - semiconductor edge (back contact).
引用
收藏
页码：117 / 120
页数：4
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