Ruthenium-doped semi-insulating InP-buried InGaAlAs/InAlAs multi-quantum-well modulators

被引：8

作者：

Kondo, S ^{[1
]}

Noguchi, Y ^{[1
]}

Tsuzuki, K ^{[1
]}

Yuda, M ^{[1
]}

Oku, S ^{[1
]}

Kondo, Y ^{[1
]}

Takeuchi, H ^{[1
]}

机构：

[1] NTT Corp, Photon Lab, Atsugi, Kanagawa 2430198, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2002年 / 41卷 / 2B期

关键词：

ruthenium; semi-insulating; InP; InGaAlAs; InAlAs; MQW; modulator;

D O I：

10.1143/JJAP.41.1171

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ruthenium(Ru)-doped InP-buried electro-absorption optical modulators a-re demonstrated for the first time. Ru-doped InP-burying semi-insulating layers were grown by conventional metal-organic vapor phase epitaxial growth (MOVPE) with phosC phin. Semi-insulating layers with high resistivities of 10(8)-10(9) Omega.cm were obtained easily and reproducibly. The capacitance and the leakage current of the modulators were reduced significantly because the interdiffusion between the transition metal and zinc decreased.

引用

页码：1171 / 1174

页数：4

共 20 条

[1] Very-high-allowability of incidental optical power for polarization-insensitive InGaAs/InAlAs multiple quantum well modulators buried in semi-insulating InP
Wakita, K
Kotaka, I
Matsumoto, S
Iga, R
Kondo, S
Noguchi, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (3B): : 1432 - 1435
[2] Comparison of semi-insulating InAlAs and InP:Fe for InP-based buried-heterostructure QCLs
Flores, Y. V.
Aleksandrova, A.
Elagin, M.
Kischkat, J.
Kurlov, S. S.
Monastyrskyi, G.
Hellemann, J.
Golovynskyi, S. L.
Dacenko, O. I.
Kondratenko, S. V.
Tarasov, G. G.
Semtsiv, M. P.
Masselink, W. T.
JOURNAL OF CRYSTAL GROWTH, 2015, 425 : 360 - 363
[3] High-speed electroab sorption modulators buried with ruthenium-doped SI-InP
Tamura, M
Yamanaka, T
Fukano, H
Akage, Y
Kondo, Y
Saitoh, T
IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (12) : 2613 - 2615
[4] Influence of Zn Diffusion on Bandwidth and Extinction in MQW Electroabsorption Modulators Buried with Semi-Insulating InP
Takayuki Yamanaka
Hideki Fukano
Ken Tsuzuki
Munehisa Tamura
Ryuzo Iga
Matsuyuki Ogasawara
Yasuhiro Kondo
Tadashi Saitoh
光学学报, 2003, (S1) : 439 - 440
[5] 1.3-μm-Wavelength AlGaInAs Multiple-Quantum-Well Semi-Insulating Buried-Heterostructure Distributed-Reflector Laser Arrays on Semi-Insulating InP Substrate
Matsuda, Manabu
Uetake, Ayahito
Simoyama, Takasi
Okumura, Shigekazu
Takabayashi, Kazumasa
Ekawa, Mitsuru
Yamamoto, Tsuyoshi
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2015, 21 (06) : 241 - 247
[6] Suppression of Zn diffusion into absorption layers in electroabsorption (EA) modulators due to the use of Ru-doped semi-insulating InP buried heterostructures
Ogasawara, M
Iga, R
Yamanaka, T
Kondo, S
Kondo, Y
2003 INTERNATIONAL CONFERENCE INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2003, : 304 - 307
[7] Reliability and degradation behaviors of semi-insulating fe-doped InP buried heterostructure lasers fabricated by RIE and MOVPE
Mawatari, H
Fukuda, M
Matsumoto, SI
Kishi, K
Itaya, Y
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1997, 15 (03) : 534 - 537
[8] High speed AlGaInAs Multiple-Quantum-Well electroabsorption modulator buried and planarized with semi-insulating Fe-Doped InP grown by chloride assisted LP-MOVPE
Gouraud, S
Cuisin, MC
Kazmierski, C
Decobert, J
Alexandre, F
Blache, F
Paraskevopoulos, A
Franke, D
2005 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 2005, : 82 - 85
[9] MOVPE GROWTH AND CHARACTERIZATION OF INGAAS/IN(GAAS)P AND INGAASP/INP/INALAS MULTI-QUANTUM-WELL STRUCTURES FOR ELECTROOPTIC SWITCHING DEVICES
AGRAWAL, N
FRANKE, D
GROTE, N
REIER, FW
SCHROETERJANSSEN, H
JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) : 610 - 615
[10] LOGARITHMIC GAIN CURRENT-DENSITY CHARACTERISTIC OF INGAAS/INGAALAS/INP MULTI-QUANTUM-WELL SEPARATE-CONFINEMENT-HETEROSTRUCTURE LASERS
WHITEAWAY, JEA
THOMPSON, GHB
GREENE, PD
GLEW, RW
ELECTRONICS LETTERS, 1991, 27 (04) : 340 - 342

← 1 2 →