LOGARITHMIC GAIN CURRENT-DENSITY CHARACTERISTIC OF INGAAS/INGAALAS/INP MULTI-QUANTUM-WELL SEPARATE-CONFINEMENT-HETEROSTRUCTURE LASERS

被引：19
|
作者：
WHITEAWAY, JEA
THOMPSON, GHB
GREENE, PD
GLEW, RW
机构：
[1] STC Technology Ltd., Harlow, Essex CM 17 9NA, London Road
来源：
ELECTRONICS LETTERS | 1991年 / 27卷 / 04期
关键词：
SEMICONDUCTOR LASERS; LASERS;
D O I：
10.1049/el:19910215
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The threshold current density of InGaAs/InGaAlAs/InP SCH MQW lasers with various cavity lengths and numbers of wells has been measured. The gain of each well depends logarithmically on current density from 200 to at least 2000 A cm-2. Curves are presented for optimising the number of wells. Comparisons are made with GaAs/AlGaAs MQW lasers.
引用
收藏
页码：340 / 342
页数：3
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