Dynamics and energetics of Si ad-dimers and ad-dimer clusters on Ge(100)

被引:34
|
作者
Wulfhekel, W
Hattink, BJ
Zandvliet, HJW
Rosenfeld, G
Poelsema, B
机构
[1] UNIV TWENTE,CTR MAT RES,NL-7500 AE ENSCHEDE,NETHERLANDS
[2] FORSCHUNGSZENTRUM,INST GRENZFLACHENFORSCH & VAKUUMPHYS,D-52425 JULICH,GERMANY
[3] UNIV BONN,INST PHYS & THEORET CHEM,D-53115 BONN,GERMANY
关键词
D O I
10.1103/PhysRevLett.79.2494
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The early stages of silicon heteroepitaxial growth on Ge(100) have been studied with scanning tunneling microscopy. Four different Si ad-dimer configurations as well as metastable strings of ad-dimers on Ge(100) have been experimentally identified using dual bias imaging. The metastable strings are aligned along [130] directions and play an important role in binding of Si atoms and nucleation of Si islands. Various dynamic events, such as the collapse of metastable strings into islands and diffusion events of ad-dimers both along and across substrate dimer rows, have been observed.
引用
收藏
页码:2494 / 2497
页数:4
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