Initial stages of Ge growth on Si(100): ad-atoms, ad-dimers, and ad-trimers

被引：8
|
作者：
Dalpian, GM [1 ]
Janotti, A [1 ]
Fazzio, A [1 ]
da Silva, AJR [1 ]
机构：
[1] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, Brazil
来源：
PHYSICA B-CONDENSED MATTER | 1999年 / 273-4卷
基金：
巴西圣保罗研究基金会;
关键词：
Ge on Si(100); semiconductor growth; ab initio calculations;
D O I：
10.1016/S0921-4526(99)00580-3
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We study, using ab initio calculations, small structures that are present at the early stages of growth of Ge on the Si(100) surface. Ad-atoms, ad-dimers, and ad-trimers are investigated. We consider different configurations of the adsorbed structures, and present results for their relaxed geometries and relative energies. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：589 / 592
页数：4
相关论文
共 31 条
  • [1] Dynamics and energetics of Si ad-dimers and ad-dimer clusters on Ge(100)
    Wulfhekel, W
    Hattink, BJ
    Zandvliet, HJW
    Rosenfeld, G
    Poelsema, B
    [J]. PHYSICAL REVIEW LETTERS, 1997, 79 (13) : 2494 - 2497
  • [2] Rotation of ad-dimers in the initial stages of Bi and Si deposition on the Si(001) surface
    Chuasiripattana, K
    Srivastava, GP
    [J]. PHYSICAL REVIEW B, 2005, 71 (15)
  • [3] Dynamics and nucleation of Si Ad-dimers on the Si(100) surface
    Brocks, G
    Kelly, PJ
    [J]. PHYSICAL REVIEW LETTERS, 1996, 76 (13) : 2362 - 2365
  • [4] Rotation of Ge ad-dimers on Ge(001)
    Afanasieva, TV
    Koval, IF
    Nakhodkin, NG
    Pyatnitsky, MY
    Zandvliet, HJW
    [J]. SURFACE SCIENCE, 2001, 482 : 702 - 707
  • [5] Diffusion mechanisms and the nature of Si ad-dimers on Ge(001)
    Zoethout, E
    Zandvliet, HJW
    Wulfhekel, W
    Rosenfeld, G
    Poelsema, B
    [J]. PHYSICAL REVIEW B, 1998, 58 (24): : 16167 - 16171
  • [6] Influence of ad-dimers on the incorporation of carbon in the Si(100) surface
    Sonnet, P
    Stauffer, L
    Selloni, A
    De Vita, A
    [J]. PHYSICAL REVIEW B, 2003, 67 (23)
  • [7] Influence of surface degrees of freedom on the adsorption of Ge ad-atoms on Si(100)
    Dalpian, GM
    Fazzio, A
    da Silva, AJR
    [J]. COMPUTATIONAL MATERIALS SCIENCE, 2001, 22 (1-2) : 19 - 23
  • [8] ELECTROCATALYSIS BY SN AND GE AD-ATOMS
    MOTOO, S
    WATANABE, M
    [J]. JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1976, 69 (03): : 429 - 431
  • [9] ENERGETICS AND DYNAMICS OF SI AD-DIMERS ON SI(001)
    ZHANG, ZY
    WU, F
    ZANDVLIET, HJW
    POELSEMA, B
    METIU, H
    LAGALLY, MG
    [J]. PHYSICAL REVIEW LETTERS, 1995, 74 (18) : 3644 - 3647
  • [10] Calculation of the behaviour of Si ad-dimers on Si(001)
    Sandia Natl Lab, Livermore, United States
    [J]. Modell Simul Mater Sci Eng, 2 (149-158):
1234