Quantitative Analysis of Trace Metallic Contamination on III-V Compound Semiconductor Surfaces

被引：1

作者：

Saga, Koichiro ^{[1
]}

Ohno, Rikiichi ^{[1
]}

机构：

[1] Sony Corp, 4-14-1 Asahi Cho, Atsugi, Kanagawa 2430014, Japan

来源：

ULTRA CLEAN PROCESSING OF SEMICONDUCTOR SURFACES XIII | 2016年 / 255卷

关键词：

metallic contamination; analysis; TXRF; III-V compound semiconductors;

D O I：

10.4028/www.scientific.net/SSP.255.319

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We studied the detection by TXRF of several transition metals on the surface of III-V materials for high mobility channel. It has been found that the lower limits of detection of some transition metals on the surface of III-V materials become higher than that on the Si surface because the sum peaks or Raman scattering peaks as well as the fluorescent X-ray main signals from the materials themselves partially cover those from the transition metals.

引用

页码：319 / 322

页数：4

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