Quantitative Analysis of Trace Metallic Contamination on III-V Compound Semiconductor Surfaces

被引：1
|
作者：
Saga, Koichiro [1 ]
Ohno, Rikiichi [1 ]
机构：
[1] Sony Corp, 4-14-1 Asahi Cho, Atsugi, Kanagawa 2430014, Japan
来源：
ULTRA CLEAN PROCESSING OF SEMICONDUCTOR SURFACES XIII | 2016年 / 255卷
关键词：
metallic contamination; analysis; TXRF; III-V compound semiconductors;
D O I：
10.4028/www.scientific.net/SSP.255.319
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We studied the detection by TXRF of several transition metals on the surface of III-V materials for high mobility channel. It has been found that the lower limits of detection of some transition metals on the surface of III-V materials become higher than that on the Si surface because the sum peaks or Raman scattering peaks as well as the fluorescent X-ray main signals from the materials themselves partially cover those from the transition metals.
引用
收藏
页码：319 / 322
页数：4
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