An Anomalous Gain Mechanism in GaN Schottky Barrier Ultraviolet Photodetectors

被引：1

作者：

Zhao De-Gang ^{[1
]}

Jiang De-Sheng ^{[1
]}

Liu Zong-Shun ^{[1
]}

Zhu Jian-Jun ^{[1
]}

Wang Hui ^{[1
]}

Zhang Shu-Ming ^{[1
]}

Yang Hui ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2009年 / 26卷 / 05期

基金：

中国国家自然科学基金; 国家高技术研究发展计划(863计划);

关键词：

SINGLE-CRYSTAL GAN; HETEROJUNCTION; DETECTORS; PHOTODIODES; LAYER;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The gain mechanism in GaN Schottky barrier ultraviolet photodetectors is investigated by focused light beam. When the incident light illuminates the central region of the Schottky contact electrode, the responsivity changes very little with the increase of reverse bias voltage. However, when the incident light illuminates the edge region of the electrode, the responsivity increases remarkably with the increase of reverse bias voltage, and the corresponding quantum efficiency could be even higher than 100%. It is proposed that the surface states near the edge of the electrode may lead to a reduction of effective Schottky barrier height and an enhancement of electron injection, resulting in the anomalous gain.

引用

页数：4

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