Channel-Hot-Carrier Degradation and Bias Temperature Instabilities in CMOS Inverters

被引：19

作者：

Martin-Martinez, Javier ^{[1
]}

Gerardin, Simone ^{[2
]}

Amat, Esteve ^{[1
]}

Rodriguez, Rosana ^{[1
]}

Nafria, Montserrat ^{[1
]}

Aymerich, Xavier ^{[1
]}

Paccagnella, Alessandro ^{[2
]}

Ghidini, Gabriella ^{[3
]}

机构：

[1] Univ Autonoma Barcelona, Dept Elect Engn, E-08193 Barcelona, Spain

[2] Univ Padua, Dept Informat Engn, I-35131 Padua, Italy

[3] Numonyx, I-20041 Agrate Brianza, Italy

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2009年 / 56卷 / 09期

关键词：

BTI; channel hot carriers; CMOS; reliability; GATE-OXIDE BREAKDOWN; IMPACT; GENERATION; ANALOG; MODEL; NBTI;

D O I：

10.1109/TED.2009.2026206

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The degradation of NMOS and PMOS transistors within CMOS inverters has been analyzed. Channel-hot-carrier (CHC) degradation and/or bias temperature instabilities (BTIs) are identified as aging mechanisms, and their implications at the device and circuit levels are discussed. Device- and circuit-level results have been linked using the BSIM4 SPICE model.

引用

页码：2155 / 2159

页数：5

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