Nitride-based flip-chip LEDs with transparent ohmic contacts and reflective mirrors

被引：18
|
作者：
Chang, S. J. [1 ]
Chen, W. S.
Lin, Y. C.
Chang, C. S.
Ko, T. K.
Hsu, Y. P.
Shen, C. F.
Tsai, J. M.
Shei, S. C.
机构：
[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan
[3] S Epitaxy Corp, Hsin Shi 744, Taiwan
来源：
IEEE TRANSACTIONS ON ADVANCED PACKAGING | 2006年 / 29卷 / 03期
关键词：
flip-chip; GaN; light-emitting diodes (LED); reflective mirrors; transparent ohmic contact;
D O I：
10.1109/TADVP.2006.871189
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Nitride-based flip-chip light-emitting diodes (LEDs) with various transparent ohmic contacts and reflective mirrors were fabricated. At 470 nm, it was found that Ni could provide 92% transmittance while Ag could provide 92.4% reflectively. It was also found that the 20-mA forward voltages measured from LEDs with Ni + Ag, Ni + Al, and Ni + Pt were 3.15, 3.29, and 3.18 V while the output powers were 16, 13.3, and 11.6 mW, respectively. Furthermore, it was found that lifetimes of the fabricated flip-chip LEDs were good.
引用
收藏
页码：403 / 408
页数：6
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