Formation of high-quality ohmic contacts to p-GaN for flip-chip LEDs using Ag/TiNx/Al

被引：4
|
作者：
Leem, DS [1 ]
Maeng, JT [1 ]
Lee, DY [1 ]
Seong, TY [1 ]
机构：
[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2005年 / 8卷 / 06期
关键词：
D O I：
10.1149/1.1911999
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
We have investigated Ag (2.5 nm)/TiNx (50 nm)/Al (200 nm) contacts for use in GaN-based flip-chip light emitting diodes (LEDs). The Ag/TiNx/Al contact becomes ohmic with specific contact resistance of 4.4 x 10(-3) Omega cm(2) when annealed at 430 degrees C for 1 min in nitrogen ambient. It is shown that the continuous Ag interlayer is broken into Ag nanodots when annealed. It is also shown that the TiNx barrier layer effectively hampers the indiffusion of Al toward GaN. Blue LEDs are fabricated using the annealed Ag/TiNx/Al contacts and are compared with those made with the annealed Ni/Au/Al contacts. (c) 2005 The Electrochemical Society. All rights reserved.
引用
收藏
页码：G150 / G152
页数：3
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