Ohmic Contacts to Gallium Nitride-Based Structures

被引：0
|
作者：
Zhelannov, A. V. [1 ]
Ionov, A. S. [1 ]
Seleznev, B. I. [2 ]
Fedorov, D. G. [1 ]
机构：
[1] PC OKB Planeta, Velikii Novgorod 173004, Russia
[2] Yaroslav The Wise Novgorod State Univ, Velikii Novgorod 173004, Russia
来源：
SEMICONDUCTORS | 2020年 / 54卷 / 03期
关键词：
heterostructure; gallium nitride; ohmic contact; metallization system; ion implantation; rapid thermal annealing; specific contact resistance; ALGAN/GAN; RESISTANCE;
D O I：
10.1134/S1063782620030197
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Studies of the characteristics of ohmic contacts to epitaxial and ion-doped gallium-nitride layers, based on the Cr/Pt/Au metallization system, are reported. The possibility of forming low-resistance contacts without the application of high-temperature treatment is shown. It is demonstrated, for AlGaN/GaN-based heterostructures, that the characteristics of Ti/Al/Ni/Au ohmic contacts are improved upon using ion implantation through a silicon-dioxide mask.
引用
收藏
页码：317 / 321
页数：5
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