Thermal stability of nitride-based diffusion barriers for ohmic contacts to n-GaN

The use of TaN, TiN, and ZrN diffusion barriers for Ti/Al-based contacts on n-GaN (n similar to 3 x 10(17) cm(-3)) is reported. The annealing temperature (600 - 1,000 degrees C) dependence of the Ohmic contact characteristics using a Ti/Al/X/Ti/Au metallization scheme, where X is TaN, TiN, or ZrN, deposited by sputtering was investigated by contact resistance measurements and Auger electron spectroscopy (AES). The as-deposited contacts were rectifying and transitioned to Ohmic behavior for annealing at 600 degrees C. A minimum specific contact resistivity of similar to 6 x 10(-5) ohm-cm(-2) was obtained after annealing over a broad range of temperatures ( 600-900 degrees C for 60 s), comparable to that achieved using a conventional Ti/Al/Pt/Auscheme on the same samples. The contact morphology became considerably rougher at the high end of the annealing range. The long-term reliability of the contacts at 350 degrees C was examined; each contact structure showed an increase in contact resistance by a factor of three to four over 24 days at 350 degrees C in air. AES profiling showed that the aging had little effect on the contact structure of the nitride stacks.