TiN and ZrN based ohmic contacts to n-GaN

被引：14
|
作者：
Mohney, SE [1 ]
Luther, BP [1 ]
Wolter, SD [1 ]
Jackson, TN [1 ]
Karlicek, RF [1 ]
Kern, RS [1 ]
机构：
[1] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
来源：
1998 FOURTH INTERNATIONAL HIGH TEMPERATURE ELECTRONICS CONFERENCE | 1998年
关键词：
D O I：
10.1109/HITEC.1998.676774
中图分类号：
V [航空、航天];
学科分类号：
08 ; 0825 ;
摘要：
引用
收藏
页码：134 / 137
页数：4
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