Materials for double patterning strategies: Development and application

被引：3
|
作者：
Perret, D. [1 ]
Simon, J. [3 ]
Gaugiran, S. [3 ]
Cutler, C. [2 ]
Cardolaccia, T. [2 ]
Pikon, A. [1 ]
Guerin, I. [3 ]
Lapeyre, C. [3 ]
Derrough, S. [3 ]
Szmanda, C. [2 ]
Trefonas, P. [2 ]
机构：
[1] Rohm & Haas Elect Mat, F-38054 Grenoble 9, France
[2] Rohm & Haas Elect Mat, Marlborough, MA 01752 USA
[3] CEA Grenoble, LETI D2NT LLIT, F-38054 Grenoble 9, France
来源：
MICROELECTRONIC ENGINEERING | 2009年 / 86卷 / 4-6期
关键词：
Lithography; Photoresist; Double patterning; Freezing; 3D;
D O I：
10.1016/j.mee.2009.01.051
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Double patterning has become the most promising approach to overcome the 32 run node challenges. Several schemes have been proposed to simplify the process, each requiring very specific materials that still have to be developed and optimized. The resist platform presented here is an image lock material which has been developed to meet the Litho-Litho-Etch (or 2P1E) approach. In this paper, we present the material development of dedicated polymers for the double imaging technique. The lithographic properties of these materials are evaluated, in term of process window (PW) and Line Edge Roughness (LER). Successful patterning of 50 and 45 nm lines at 90 nm pitch has been obtained. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：757 / 760
页数：4
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