Modeling substrate noise generation in CMOS digital integrated circuits

被引:12
|
作者
Nagata, M [1 ]
Morie, T [1 ]
Iwata, A [1 ]
机构
[1] Hiroshima Univ, Integrated Syst Lab, Higashihiroshima 7398526, Japan
来源
PROCEEDINGS OF THE IEEE 2002 CUSTOM INTEGRATED CIRCUITS CONFERENCE | 2002年
关键词
D O I
10.1109/CICC.2002.1012889
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
A time-series divided parasitic capacitance model accurately simulates substrate noise generation of practical CMOS digital integrated circuits in time domain. The simulation of a 0.25-mum z80 micro-controller with 62.5-MHz clock frequency costs less than 10 sec. per a clock cycle including the model generation. Simulated substrate noise well consists with 200-ps 100-muV resolution measurements in wave-shapes validated for clock frequency up to 125 MHz and shows the peak-amplitude error of less than 2% against supply-voltage scaling from 2.5 V to 1.6 V.
引用
收藏
页码:501 / 504
页数:4
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