Laser-induced fluorescence analysis of plasmas for epitaxial growth of YBiO3 films with pulsed laser deposition

被引:7
|
作者
Orsel, Kasper [1 ]
Groenen, Rik [2 ]
Bastiaens, Bert [1 ]
Koster, Gertjan [2 ]
Rijnders, Guus [2 ]
Boller, Klaus-J. [1 ]
机构
[1] Univ Twente, MESA Inst Nanotechnol, Dept Sci & Technol, Laser Phys & Nonlinear Opt, Enschede, Netherlands
[2] Univ Twente, MESA Inst Nanotechnol, Dept Sci & Technol, Inorgan Mat Sci, Enschede, Netherlands
来源
APL MATERIALS | 2016年 / 4卷 / 12期
关键词
BI2SE3; THIN-FILMS; INSULATOR;
D O I
10.1063/1.4971349
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We record the two-dimensional laser-induced fluorescence (LIF) on multiple plasma constituents in a YBiO3 plasma. This allows us to directly link the influence of oxygen present in the background gas during pulsed laser deposition to the oxidation of plasma species as well as the formation of epitaxial YBiO3 films. With spatiotemporal LIF mapping of the plasma species (Y, YO, Bi, and BiO) in different background gas compositions, we find that little direct chemical interaction takes place between the plasma plume constituents and the background gas. However, a strong influence of the background gas composition can be seen on the YBO film growth, as well as a strong correlation between the oxygen fraction in the background gas and the amount of YO in the plasma plume. We assign this correlation to a direct interaction between the background gas and the target in between ablation pulses. In an O-2 background, an oxygen-rich surface layer forms in between ablation pulses, which provides additional oxygen for the plasma plume during target ablation. This differs from our previous observations in STO and LAO plasmas, where species oxidation primarily takes place during propagation of the plasma plume towards the substrate. (C) 2016 Author(s).
引用
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页数:9
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