Preparation of vanadium diselenide thin films and their application in CdTe solar cells

被引：19

作者：

Gao, Jingjing ^{[1
]}

Di, Xia ^{[1
]}

Li, Wei ^{[1
]}

Feng, Lianghuan ^{[1
]}

Zhang, Jingquan ^{[1
]}

Wu, Lili ^{[1
]}

Li, Bing ^{[1
]}

Wang, Wenwu ^{[1
]}

Zeng, Guanggen ^{[1
]}

Yang, Jiayi ^{[1
]}

机构：

[1] Sichuan Univ, Coll Mat Sci & Engn, Chengdu 610064, Peoples R China

来源：

THIN SOLID FILMS | 2014年 / 550卷

基金：

中国国家自然科学基金;

关键词：

Vanadium diselenide; Thin films; Back contact; Cadmium telluride; Solar cells; Electron beam evaporation; PHOTOEMISSION; STABILITY; PURE;

D O I：

10.1016/j.tsf.2013.10.032

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Vanadium diselenide thin films were prepared by electron beam evaporation. The properties of vanadium diselenide thin films were investigated using X-ray diffraction, scanning electron microscope, transmission spectra, electrical and Hall measurements. To further investigate the application of vanadium diselenide thin films, device performance in CdTe solar cells with a vanadium diselenide layer was also studied. The results indicate that vanadium diselenide thin films had a stable hexagonal structure after annealing. The thin films were p-type semiconductor materials with the high work function and high carrier concentration. Vanadium diselenide thin films could form a good ohmic contact to CdTe solar cells. Thus, cell performance was greatly improved when introduced a vanadium diselenide buffer layer. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：638 / 642

页数：5

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