Preparation of vanadium diselenide thin films and their application in CdTe solar cells

被引:19
|
作者
Gao, Jingjing [1 ]
Di, Xia [1 ]
Li, Wei [1 ]
Feng, Lianghuan [1 ]
Zhang, Jingquan [1 ]
Wu, Lili [1 ]
Li, Bing [1 ]
Wang, Wenwu [1 ]
Zeng, Guanggen [1 ]
Yang, Jiayi [1 ]
机构
[1] Sichuan Univ, Coll Mat Sci & Engn, Chengdu 610064, Peoples R China
基金
中国国家自然科学基金;
关键词
Vanadium diselenide; Thin films; Back contact; Cadmium telluride; Solar cells; Electron beam evaporation; PHOTOEMISSION; STABILITY; PURE;
D O I
10.1016/j.tsf.2013.10.032
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Vanadium diselenide thin films were prepared by electron beam evaporation. The properties of vanadium diselenide thin films were investigated using X-ray diffraction, scanning electron microscope, transmission spectra, electrical and Hall measurements. To further investigate the application of vanadium diselenide thin films, device performance in CdTe solar cells with a vanadium diselenide layer was also studied. The results indicate that vanadium diselenide thin films had a stable hexagonal structure after annealing. The thin films were p-type semiconductor materials with the high work function and high carrier concentration. Vanadium diselenide thin films could form a good ohmic contact to CdTe solar cells. Thus, cell performance was greatly improved when introduced a vanadium diselenide buffer layer. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:638 / 642
页数:5
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