Output-Capacitor-Less LDO with High PSR

被引:1
|
作者
Zhang, Yue [1 ]
Yu, Ningmei [1 ]
Jiang, Zhiqiang [1 ]
Wu, Yuanyuan [1 ]
机构
[1] Xian Univ Technol, Sch Automat & Informat Engn, Xian, Shaanxi, Peoples R China
基金
中国国家自然科学基金;
关键词
low-dropout regulator; capacitor-free; Power supply rejection; Q-reduction; REGULATOR;
D O I
10.1109/edssc.2019.8754483
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
A low-dropout regulator (LDO) with high power supply ripple rejection (PSR) and capacitor-free is presented in this paper. The LDO proposes a PSR enhancement module based on the analysis of the power supply noise transmission path. It uses the Q-reduction circuit to reduce the required on-chip capacitor and the load on the minimum required output. The proposed LDO is implemented in 110 nm CMOS process. The simulation results indicate that the total on-chip capacitance required for the designed circuit is 6.5 p. The LDO has a phase margin of more than 60 in the range of 50uA to 50 mA. The optimum PSR of the LDO at low frequency is -109 dB. The LDO achieves line and load regulation of 65 mu V/V and 0.396 mu V/mA respectively.
引用
收藏
页数:3
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