Development of MOCVD Technology for Integrated YBCO Layer/Buffer Layer Fabrication for Coated Conductors

被引：11

作者：

Molodyk, Alexander ^{[1
]}

Novozhilov, Mikhail ^{[1
]}

Bitkowsky, Scott ^{[1
]}

Street, Susan ^{[1
]}

Delaney, Albert ^{[1
]}

Castellani, Louis ^{[1
]}

Ignatiev, Alex ^{[1
]}

机构：

[1] Met Oxide Technol Inc MetOx, Houston, TX 77040 USA

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 2009年 / 19卷 / 03期

关键词：

Buffer layers; coated conductors; MOCVD; YBCO; BUFFER LAYERS; FILMS; DEPOSITION;

D O I：

10.1109/TASC.2009.2018147

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Chemical deposition of all buffer and YBCO layers is recognized as the most economical approach to coated conductor manufacturing. Metal Oxide Technologies Inc. (MetOx) has been developing a cost-effective technology to deposit all buffer and superconducting layers by MOCVD. High I(c) = 201 A/cm and J(c) = 1.53 MA/cm(2) values are obtained on ORNL RA-BiTS buffers. The best superconducting properties of MetOx YBCO films of J(c) = 3.34 MA/cm(2) and I(c) = 480 A/cm have been achieved on LANL IBAD buffers. MetOx MOCVD coated conductors demonstrate promising I(c) = 137 A/cm and J(c) = 1.10 MA/cm(2) . Good superconducting performance has been demonstrated on several 1 m long YBCO tapes. Pinning enhancement via Y(2)O(3) doping in YBCO has been successfully implemented. Very high MOCVD growth rates of 1.25 mu m/min have been demonstrated producing well-textured superconducting YBCO films.

引用

页码：3196 / 3199

页数：4

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