Fabrication of NdGaO3 buffer layer on textured Ni tape for long length coated conductors

被引：3

作者：

Kim, SB ^{[1
]}

Maeda, T

Yamada, Y

Suga, T

Matsumoto, K

Watanabe, T

Hirabayashi, I

机构：

[1] ISTEC, Superconduct Res Lab, Nagoya, Aichi, Japan

[2] Furukawa Elect, Nikko, Japan

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 2001年 / 11卷 / 01期

关键词：

YBCO film; NdGaO3 seed layer; LaNiO3 buffer layer; PLD process; LPE process;

D O I：

10.1109/77.919772

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Biaxially aligned NdGaO3 (NGO) layers were successfully fabricated on the single crystalline substrates (STO, LAO and NiO/STO) and metalic substrate (NiO/Ni) by pulsed laser deposition (PLD) method and post-annealing process. And also, the good biaxial orientation YBa2Cu3O7.delta (YBCO) films on NGO layers were deposited by liquid phase epitaxy (LPE) method. From this work, it has been proved for the first time that NGO thin film can be used as a seed layer for the YBCO thick film deposition by LPE method. And it is clear that the NGO thin film growth process, where biaxially orientated films were deposited using PLD at room temperature followed by simple post-annealing process, is very effective for the uniform long length coated conductor production.

引用

页码：3317 / 3320

页数：4

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