Laser-induced self-organization of nano-wires on SiO2/Si interface

被引：3
|
作者：
Medvid, Artur [1 ]
Dmitruk, Igor [2 ]
Onufrijevs, Pavels [1 ]
Pundyk, Iryna [2 ]
机构：
[1] Riga Tech Univ, LV-1048 Riga, Latvia
[2] Kyiv Nacl Taras Shevchenko Univ, Kiev, Ukraine
来源：
MICROELECTRONICS JOURNAL | 2009年 / 40卷 / 03期
关键词：
Graded band gap Si; SiO2/Si; Laser radiation; Nano-hills; Photoluminescence; AFM;
D O I：
10.1016/j.mejo.2008.06.073
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
original observation of new graded band gap structures formed on the surface of elementary Si semiconductor at studying the optical properties of Si nano-hills formed at the SiO2/Si interface by pulsed Nd:YAG laser irradiation is reported. The self-organized nano-hills on Si surface are characterized by a strong photoluminescence in the visible range of spectrum with a shoulder extended to the long-wave part of the spectrum. The feature is explained by the quantum confinement effect in nano-hills-nano-wires of gradually changing diameter. (C) 2008 Published by Elsevier Ltd.
引用
收藏
页码：449 / 451
页数：3
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