Pattern Formation of Silicon Oxide Thin Film with InkMask

被引：0

作者：

Ito, Takuya ^{[1
]}

Ota, Yasuyuki ^{[1
]}

Nishioka, Kensuke ^{[1
]}

机构：

[1] Miyazaki Univ, Miyazaki 8892192, Japan

来源：

QUANTUM, NANO, MICRO TECHNOLOGIES AND APPLIED RESEARCHES | 2014年 / 481卷

关键词：

Pattern formation; Ink; Silicon oxide; Ozone; SYSTEMS; OZONE;

D O I：

10.4028/www.scientific.net/AMM.481.98

中图分类号：

TH [机械、仪表工业];

学科分类号：

0802 ;

摘要：

Patterned silicon oxide films were formed by a simple process using a dimethyl-silicone-oil as source and inks as patterning masks.After the coating of the ink, the dimethyl-silicone-oil was coated onto the substrate. The sample was heated at 150 degrees C and ozone gas was irradiated. After the heat treatment with ozone gas, patterned silicon film was formed. The circle pattern with a diameter of 20 mu m wassuccessfully formed.After the formation of the patterned silicon oxide film, the silicon oxide was hardly observed at the position where the ink coated.

引用

页码：98 / 101

页数：4

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