Operating Principles, Design Considerations, and Experimental Characteristics of High-Voltage 4H-SiC Bidirectional IGBTs

被引：15

作者：

Chowdhury, Sauvik ^{[1
]}

Hitchcock, Collin W. ^{[2
]}

Stum, Zachary ^{[3
]}

Dahal, Rajendra P. ^{[2
]}

Bhat, Ishwara B. ^{[2
]}

Chow, T. Paul ^{[2
]}

机构：

[1] Monolith Semicond Inc, Round Rock, TX 78664 USA

[2] Rensselaer Polytech Inst, Dept Elect & Syst Engn, Dept Comp & Syst Engn, Troy, NY 12180 USA

[3] Gen Elect Global Res Ctr, Niskayuna, NY 12309 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017年 / 64卷 / 03期

关键词：

Bidirectional switch; high voltage; insulate gate bipolar transistors; silicon carbide (SiC); JUNCTION TERMINATION EXTENSION;

D O I：

10.1109/TED.2016.2631241

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Bidirectional power transistors are essential components of several power electronics systems, such as matrix converters. In this paper, we present the operating principles, design considerations, and experimental characteristics of a novel planar gate 4H-SiC bidirectional insulated gate bipolar transistors. The impact of variousdrift layer and unit cell parameters on blocking, on-state, and switching performance has been evaluated by using numerical simulations, and critical performance tradeoffs have been discussed. Based on the optimized design, devices were fabricated on lightly doped free-standing n-type 4H-SiC wafers. Fabricated devices showed good conductivity modulation, with a forward voltage drop of 9.7 V at 50 A/cm(2) at room temperature, which increased to 11.5 V at 150 degrees C.

引用

页码：888 / 896

页数：9

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